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In this paper, the CZT oxidized layers on cadmium zinc telluride (CZT) wafer formed by two-step chemical passivation process (KOH-KCl + NH4F/H2O2) were investigated by using XRD, ED-XRF, SEM. The results show that the oxidized layer obtained by using this process has a very uniform and compact morphology and consists mainly of TeO2, TeO3 and CdTeO3. In particular, the thickness of the oxidized layer...
Evidence of mobile, positive charges (holes) on the top surface of GaN HFET is found by conducting C-V measurement of a MIS HEMT diode. Significantly improved understanding of the effects of built-in electric polarization and doping on III-nitride heterojunction device structure electrical properties has been made. The result also confirms that removal of surface mobile holes is the root cause for...
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