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This paper shows that that H plays a role in the forming of oxide RRAM which is derived from studies of both the electrical and physical properties of the oxides. Going forward, there is a clear need for additional studies that combine careful physical and electrical characterization of oxide and sulfide RRAM devices, as electrical measurements alone are ambiguous. If a thorough understanding of the...
The resistive switching behavior of Ag/Si3N4/Pt device was observed and studied for the first time. Resistance ratio larger than 4*102 and 104s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si3N4/Pt devices.
The influence of current switch driver output resistance and glitch energy mechanism for D/A converter are analyzed, and the principle of current switch driver design is proposed. Based on the proposed design principle, a novel simple high performance current switch driver is proposed. It comprises four NMOS transistor, two PMOS transistor and a substrate bias capacitor. The introduction of bias capacitor...
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