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We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures, which suggests that the carrier transport is ballistic. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for hp32-nm technology...
The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However, various issues such as the switching mechanisms, switching uniformity, scalability and reproducibility have not yet been solved. In this paper, we discuss the recent progress of switching mechanisms and switching behaviors of various materials.
Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO2 memory devices with the sandwiched structure of Cu/ZrO2:Cu/Pt. The ratio between the high and low resistance is in the order of 106. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns, respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on...
This paper has reported a programmable switch composed of copper-doped-SiO2 sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode (TE), while with regard to the cell without TE, no rectifying-like I-V characterization was observed. This rectifying-like I-V curve is properly caused by electrode contact...
65 nm BEOL trench etch is apt to suffer the marginal PR issue. It is a big challenge for trench etch process to simultaneously satisfy the requirements for both metal resistance (Rs) and breakdown Voltage (VBD). The copper surface condition of via bottom is a big concern of trench etch process as well. In this paper, we present several electrical parameter issues that occurred at 65 nm trench etch...
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