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We report on the experimental evidence of a fully ballistic nano-FET with a voltage gain higher than 1 which is based on a 1D quantum ballistic conductor. In such a FET, the transconductance and the output conductance are basically modulated by the 1D subbands and the experimental results can theoretically be explained based on the Landauer-Buttiker formalism and the Buttiker model of the saddle-point...
Inductive effect becomes important for on-chip global interconnects, like Power/Ground (P/G) grid. Partial reluctance (the inverse of partial inductance) has been accepted to model inductive effect, for its local property. In this paper, a new method which makes full use of the structure regularity of P/G grid is proposed. With a reuse scheme and carefully handling of boundary effect, the proposed...
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