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Detailed measurements of front and back channel characteristics in advanced SOI MOSFETs (ultrathin film, metal gate, selective epitaxy of source/drain) are used to reveal the transport properties at the corresponding Si/high-K (HfO2/HfSiON) and Si/SiO2 interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage and subthreshold...
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