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Beginning in the mid-1990s, Sandia National Laboratories began its migration to Silicon-on-Insulator (SOI) wafers to develop a radiation-hardened semiconductor process for sub-0.5mum geometries. Successfully radiation hardening SOI technologies enabled an in-house processing familiarity that exceeded our expectations by opening opportunities to improve other technologies. Rather than rely on a single...
In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated by L. Harik et al was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB.
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