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We demonstrate spectral control of a 1.055 mum fiber-coupled microlensed microchip VECSEL by using a coupled-cavity effect. The coupled-cavity created between the fiber and the microchip output coupler facilitates single-mode operation with fiber-coupled power above 18 mW.
We demonstrate a 2.3 mum emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction.
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 mum.
We propose and demonstrate a modelocked bi-directional VECSEL with a double V cavity configuration. The laser generates 1.04 mum optical pulses with a 0.76 GHz repetition rate and a total average output power of 4 mW.
We demonstrate adjustable chirp of directly-modulated injection-locked VCSELs at 10-Gbps resulting from a novel data pattern inversion phenomenon, which leads to chromatic dispersion compensation and a 10X distance increase over standard single-mode fiber.
We demonstrate a record resonance frequency enhancement of 1.55-mum VCSELs from 10 GHz to 107 GHz under ultra-high optical injection locking. Detuning and injection-ratio dependence are characterized to show the broad applicability of the technique.
The next generation 850 nm datacom VCSEL to go into production will be the 17 G VCSEL. It is not certain that direct modulation will be suitable given the reliability, supply voltage, and temperature range required. This paper is a first look at VCSELs designed and targeted for production 17 G use. The design is discussed and LIV and small signal frequency response is presented.
We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs.
We demonstrate bandwidth enhancement of external- and direct-modulated lasers using a tunable optical equalizer. Modulation bandwidth of >50 GHz for LiNbO3 modulators was obtained. Also, the equalizer permits the increased-speed and chirp-reduction simultaneously for direct-modulated VCSELs.
We propose and demonstrate a direct method to observe higher-order whispering-gallery modes in vertical cavity surface emitting lasers (VCSELs) at room temperature by embedding a defect-free a surface micro-structure. Up to the 23rd azimuthal order whispering-gallery mode confined laterally by the native oxide layers is observed in experiments and identified by the spectrum in experiments as well...
We report the first experimental observation of different forms of wavelength polarization switching and bistability with a 1550-nm VCSEL operated just above threshold and subject to orthogonally-polarised optical injection.
We report on a first successful operation of current-driven GaN photonic-crystal surface-emitting laser, which can operate in blue-violet wavelength regions at room temperature.
Pure frequency-induced polarization testability of a 1550 nm single-mode VCSEL subject to orthogonal optical injection has been observed. The hysteresis width becomes constant when the injection power is greater than a value Pnu. Power-induced polarization bistability is also found near Pnu.
A simple theoretical model is used to derive closed form expressions for the FM response of VCSELs. These match measurement results very well and give a significant improvement over the usually assumed first order model.
We discuss a passively modelocked VECSEL with both gain and saturable absorber integrated into a single semiconductor structure. We refer to this new kind of laser as the modelocked integrated external-cavity surface emitting laser (MIXSEL).
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
We experimentally realized a diffractive unstable laser resonator with a Gaussian shaped outcoupled beam. The structured mirror is assembled with a VECSEL which produces a high beam quality even for the highest amplifier gain.
Integration of optically-pumped VECSELs with pump lasers is demonstrated using an innovative contacting scheme. Devices for medium-power green conversion (lambda~1060 nm) are fabricated with threshold currents as low as 160 mA and cw output powers exceeding 100 mW.
We demonstrate 10 Gb/s VCSEL based transmission over 100 m of larger core (120 mum) graded-index perfluorinated plastic optical fiber, thus establishing that multi-transverse-mode VCSELs are compatible with highly alignment tolerant plastic optical fiber.
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