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1310 nm optically pumped SDLs based on wafer fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors demonstrate a record-high 6 W of output power in the flip-chip heat dissipation configuration.
We present optically pumped semiconductor disk lasers with a thin dielectric layer placed between the semiconductor distributed Bragg reflector and the metallization interface. The thin dielectric layer is shown to introduce negligible penalty to the thermal resistance of the device while allowing high reflectivity with a reduced number of distributed Bragg reflector layer pairs.
The key to high power operation of semiconductor disk lasers (SDLs) is thermal management, which is usually accomplished by so-called flip-chip technique or by using an intracavity heat spreader. Normally it is assumed that the thermal management is applied to the gain medium only. However, the need for appropriate temperature control of the semiconductor saturable absorber mirror (SESAM) has been...
Raman amplification has emerged as a promising gain material for multiple-wavelength lasers. Inhomogeneous broadening is a dominant mechanism of Raman gain broadening at room temperature which prevents the gain competition at closely spaced wavelengths [1]. Direct Watt-level core-pumping of single-mode fiber lasers with low-noise semiconductor disk lasers (SDL) demonstrated recently, represents a...
The paper presents the modelling and design particularities of laterally-coupled distributed feedback lasers (LC-DFB), the fabrication process, involving a highly productive and cost-effective UV-nanoimprint lithography technique, and the characteristics obtained up to now for the LC-DFB lasers fabricated for pumping Cesium atomic clocks. 550 μm long LC-DFB lasers, emitting at 894 μm, had 10 mA threshold...
Novel 1310 nm and 1550 nm optically pumped VECSELs based on wafer fused InAlGaAs/InPAlGaAs/GaAs gain mirrors demonstrate high CW fundamental mode continuous wave output in excess of 2 W at room temperature.
Semiconductor disk lasers (SDLs) operating around 1.55 mum have been the subject of increasing interest. The performance of monolithically grown SDLs in this wavelength range suffers, however, from the poor quality of the InP-based distributed Bragg reflector (DBR). Recently, wafer fusion technique was applied to a long- wavelength SDL to avoid this obstacle. An active region grown on InP substrate...
A novel approach based on a wafer fused optically-pumped semiconductor disk laser (SDL) operating at 1.2 mum is reported. The technique allows integrating materials with different lattice constants and provides convenient means to extend the operation wavelength of an SDL. This work demonstrates the first wafer fused optically-pumped semiconductor disk laser operating at the 1.2 m wavelength regime...
A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InPAlGaAs/GaAs half cavity shows a high CW output of 2.28 W at room temperature and 250 mW at 75degC.
We propose and demonstrate a modelocked bi-directional VECSEL with a double V cavity configuration. The laser generates 1.04 μm optical pulses with a 0.76GHz repetition rate and a total average output power of 4 mW.
We propose and demonstrate a modelocked bi-directional VECSEL with a double V cavity configuration. The laser generates 1.04 mum optical pulses with a 0.76 GHz repetition rate and a total average output power of 4 mW.
We present the first demonstration of hysteresis in a semiconductor disk laser mode-locked with semiconductor saturable absorber. It is shown that the size of the hysteresis loop can be controlled by varying the unsaturated gain.
We demonstrate strain-compensated InGaAs/GaAsP/GaAs 1.02-μm vertical-cavity surface-emitting lasers (VCSELs) grown monolithically on a GaAs substrate using molecular beam epitaxy. VCSELs at this wavelength are optimal light sources for recently developed graded-index perfluorinated plastic optical fibers. Preliminary results show that the VCSELs oscillate in continuous-wave mode at temperatures up...
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