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We propose and demonstrate a modelocked bi-directional VECSEL with a double V cavity configuration. The laser generates 1.04 mum optical pulses with a 0.76 GHz repetition rate and a total average output power of 4 mW.
We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs.
We discuss a passively modelocked VECSEL with both gain and saturable absorber integrated into a single semiconductor structure. We refer to this new kind of laser as the modelocked integrated external-cavity surface emitting laser (MIXSEL).
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
A pulse is shortened by repeated transits of a quantum well absorber in which the band-edge is detuned to higher energy. The calculated effect is consistent with the experimentally observed formation of 448-fs transform-limited pulses.
The authors report the first passively mode-locked 830- nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.
We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).
The rms timing jitter of 500-fs optical pulses from a passively mode-locked, actively stabilised vertical-external-cavity surface-emitting laser was determined by the Von der Linde method to be 350 fs over 500 Hz - 500 KHz.
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