The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Mitigation techniques to reduce the increased SEU cross-section associated with charge sharing in a 90 nm DICE latch are proposed. The increased error cross-section is caused by heavy ion angular strikes depending on the directionality of the ion vector, thereby exacerbating charge sharing among multiple circuit nodes. The use of nodal separation as a mitigation technique shows an order of magnitude...
Stress induce voiding (SIV) inside and under vias in copper interconnects with ldquowingrdquo-pattern were investigated for 90 nm and 65 nm node processes. The difference of two voidings are the resistance change during acceleration test and the diffusion path. However, common features were found between both types of voiding; the interconnect fails fast as the ldquowingrdquo area grows. Both types...
We found a new-mode degradation of program-disturb immunity in split-gate SONOS memory with 90-nm technology node. The degradation proved to be caused by hot holes created during erase operation: they can reach word gate (WG) oxide over memory gate (MG). The captured holes within the WG oxide reduce effective inhibit-field that is applied to the WG of non-selected cells during program operation, thereby...
On-die measurements of VDD and VSS signals inside a 90 nm technology chip are presented. The results show fluctuations in the VDD and VSS signals, which might constitute an important new reliability concern. These fluctuations also indirectly affect other reliability mechanisms, such as NBTI, HCI and TDDB. Simulations predict aggravation of this phenomenon for future technologies, which may prove...
We carried out simultaneous measurement of SERs and cosmic ray neutron spectra for the first time. We measured SERs using 90 nm CMOS SRAM chips and measured neutron spectra using a Bonner multisphere spectrometer. We carried out the SER field measurement at the 4200 m summit of Mauna Kea, which is the most suitable place for SER field measurements because the neutron flux is over 10 times greater...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.