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In this work, the first investigation of Au/Ti/HfO2/InAs metal-oxide-semiconductor capacitors is reported. The HfO2 is deposited by atomic layer deposition and characterized by current-voltage and capacitance-voltage measurements. The effects of surface treatment, deposition temperature, post-deposition anneal, and film thickness on breakdown field, leakage current, capacitance, and frequency dispersion...
The nanoparticles (NPs) have been widely used to supersede the conventional charge trapping layers (CTLs) of the silicon-oxide-nitride-oxide-silicon devices for reducing the charge loss due to a local leakage path. Moreover, to reduce the gate tunneling leakage current, the high-dielectric-constant (high-k) gate oxides with the identical equivalent-oxide thickness (EOT) are promising for the advanced...
An analysis of the MOSCAP has been carried out using the non-equilibrium Green's function formalism. The gate and the bulk regions have been assumed to be in thermal equilibrium which implies a constant Fermi energy epsivFG and epsivFB, respectively. The leakage current through the gate oxide, which separates the equilibrium regions, has been calculated assuming ballistic transport between the two...
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