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Ultra-thin silicon oxide (SiO2) insulating films have been obtained by rapid thermal oxidation (RTO) and annealing (RTA), using different temperatures of 600, 700, 800 and 960degC for 40s, in oxygen and nitrogen, respectively. Characterization by Ellipsometry (for fixed refractive index of 1.46), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) analyses reveals oxide thickness...
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