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This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density
We fabricated [100] and [110] directed nano wire MOSFET (NWFET), which works as NFET and PFET in the same channel. By comparing [100] and [110] direction, significantly small threshold voltage (Vth) fluctuation is experimentally observed in [110] PFET for the first time. This result supports the superiority of [110] NW PFET. Extremely narrow NWFET works as single-electron/single-hole transistors (SET/SHT)...
In this paper we report high frequency GaN power device and measured power performance of the first W-band (75 GHz-110 GHz) MMIC fabricated in GaN material system. The first W-band GaN MMIC with 150 mum of output gate periphery produces 316 mW of continuous wave output power (power density =2.1 W/m) at a frequency of 80.5 GHz and has associated power gain of 17.5 dB. By comparison the reported state...
The authors report record performances for the reliability of amorphous silicon (a-Si:H) photosensor under high flux illumination. A fully functional VGA (3.0 mum pitch) image sensor, which can withstand 90 suns (= 9 Mlux) during 26 ks, was realized by the optimization of a-Si:H parameters, the pixel structure and the reading voltage
Enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs) with integrated slant field-plates were developed for high breakdown voltage (VBD) and low on-resistance (RON). Combination of the self-aligned slant field-plate technology for high VBD and self-aligned CF4 plasma treatment for E-mode operation yielded high-performance device with a VBD of 1400V, which is one of the highest...
A high-power amplifier using two 28.8-mm-periphery GaN HEMTs was demonstrated with all matching components inside the package. When biased at 55 V, a power bandwidth of 3.3-3.6 GHz was obtained, with 550-Wpeak output, 12.5-dB associated gain and 66% drain efficiency at 3.45 GHz
We report on highly efficient GaN-based light emitting diodes (LEDs) with the photonic crystals (PhC) which are initially patterned on Si substrates. The PhC structures are replicated at the LED bottom by hetero-epitaxial growth and a subsequent wafer-transfer technique. Owing to the synergetic effects of the higher crystal quality obtained by lateral growth on the patterned Si substrate and the increased...
(110) surface orientation have attracted great interests, since pFETs on (110) substrates show much superior mobility to (100) pFETs (Sun, et. al., 2005 and Sato, et, al, 1969). In addition, (110) surface orientation is widely utilized in advanced FET structures such as FinFETs (Liow, 2005) and Tri-gate FETs (Kavalieros, 2005). Thus, there are growing interests in whether, how, and how far the electron...
DNA can be used as a versatile, programmable molecular building material for creating self-assembled nanostructures. Directed-assembly using DNA as the addressing agent has been demonstrated for conducting and semi-conducting inorganic materials for emerging applications in nanoelectronics fabrication. So far, complex programmable DNA nanostructures have been made, along with simple repetitive mixed...
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