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The paper demonstrates large effective work function (Phieff) modulation towards Si band-edges based on physical and chemical nature of interfacial impurities at Ni-FUSI/SiON and HfSiON interfaces. The authors clarify the influence of Ni-silicide phase on the Phieff modulation with dopant segregation. Phieff of 4.14 eV is obtained with a combination of phosphorous ion implantation last (IIL) doping...
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