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In this work, using Si interface passivation layer (IPL) we present the electrical characteristics of TaN/HfO2/GaAs both p-and n-MOSFET made on GaAs substrates with excellent electrical and reliability characteristics, thin EOT (~2.3-3.0nm), low frequency dispersion (< 5%) and high maximum mobility (1213 cm2/V-s) with high temperature PMA for n-MOSFET on undoped GaAs. Good inversion behavior with...
Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of fT=765 GHz when measured at 25°C. When cooled to -55°C, fT improves more than 10% to fT=845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction...
Short wavelength lasers based on GaAs and GaN substrate have been developed for the application of the optical data storage. Both lasers have been required to have high performance such as the higher output power and the integration, leading to the ultra high speed recording and the lower cost. CD and DVD lasers based on GaAs are recently integrated to one chip with both high output power more than...
We have experimentally investigated the impact of lateral and vertical scaling of In0.7Ga0.3As HEMTs on their logic performance. Reducing the In0.52Al0.48As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature VT = -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value...
By using novel surface passivation techniques (plasma nitridation, AlN-passivation) on GaAs, we demonstrate GaAs p- and n-MOS devices integrated with ALD-HfO2/TaN gate stack. Results show that robust passivation layers can be achieved at HfO2/GaAs interface, leading to good C-V characteristics on both n- and p-type GaAs with low leakage current. It is also found that GaAs MOS devices with plasma nitridation...
This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Ag-ohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 mum demonstrated excellent DC and RF characteristics
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