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The superior characteristics of variable body-factor (γ) FD SOI MOSFETs which we have recently proposed are experimentally demonstrated. Devices were fabricated on a SOI wafer with BOX thickness of 10 nm by using the 140 nm technology. Their advantages, small leakage-current in the standby-state and improved delay in the active-state, are clearly validated by the measurements. This scheme is expected...
Carrier velocity in the MOSFET channel at the top of the barrier near the source (virtual source) is the main driving force for improved transistor performance with scaling. This paper uses an analytical model that relates MOSFET intrinsic delay to key technology parameters and presents a methodology for extracting those parameters from literature benchmark papers. A historical trend of channel velocity...
Using standard single damascene type techniques on bulk-Si, combined on one hand with extreme wafer thinning and on the other with Cu-Cu thermo-compression bonding technology, the paper demonstrate yielding 10k through-wafer 3D-via chains with a via pitch of 10μm for a via diameter of 5μm. The bonded contacts exhibit shear strengths exceeding 40MPa. Measurements indicate there is no significant contact...
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