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A novel strained-SiGe n-channel field-effect transistor (nFET) featuring silicon-carbon (Si0.99C0.01) source/drain (S/D) stressors and tensile stress nitride (SiN) liner is demonstrated for the first time. The silicon-carbon Si1-yC y, material is pseudomorphically grown by selective epitaxy and the carbon mole fraction y incorporated is 1%. Si0.99C 0.01 S/D was employed to induce uniaxial tensile...
We present a 45-nm SOI CMOS technology that features: i) aggressive ground-rule (GR) scaling enabled by 1.2NA/193nm immersion lithography, ii) high-performance FET response enabled by the integration of multiple advanced strain and activation techniques, iii) a functional SRAM with cell size of 0.37mum2, and iv) a porous low-k (k=2.4) dielectric for minimized back-end wiring delay. The list of FET-specific...
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