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A new surface potential based poly-Si TFT model for circuit simulation was developed, accounting for the influence of both deep and tail states across the band gap. The model describes the drain current for all regions of operation using the unified equation. Calculations using the drain current model produce results that are in good agreement with the measured I-V characteristics of poly-Si TFTs
Self-aligned printing (SAP) is a recently developed bottom-up printing technique which utilizes the unique ink droplet motion on heterogeneous surfaces to define nanoscale critical features with high yield and uniformity. It was originally developed with conductive polymers. Here we extend this method to fabrication of functional conductive nanostructures with gold nanoparticle ink that allow achieving...
This paper presents a surface potential based poly-Si thin-film transistor (SPT) model for SPICE which is formulated with both surface and grain boundary (GB) potentials calculated by Poisson equations. The drain current model includes GB induced mobility modulation, hot carrier effect, gate induced drain leakage, and trap dependent thermal leakage. The capacitance model is derived from physically...
A double-layer TFT NAND-type flash memory is demonstrated, ushering into the era of three-dimensional (3D) flash memory. A TFT device using bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005, Lai et al., 2006) with fully-depleted (FD) poly silicon (60 nm) channel and tri-gate P+-poly gate is integrated into a NAND array. Small devices (L/W=0.2/0.09 mum) with excellent performance and reliability...
CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150 degC. The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen...
The high mechanical reliability of a-Si:H TFTs have been fabricated on plastic substrate for flexible display applications. The promising TFT backplane has been successfully applied for AMLCD on colorless polyimide (PI) substrate. The tri-layer of Ti/Al/Ti with 10 mum width are used as scan lines and data lines to replace Cr for stress compensation, and can sustain mechanical bending cycles. The TFTs...
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