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Companies estimate the NBTI lifetime of SRAM memories usually by extrapolation of the DC degradation. This method underestimates the lifetime of the memory cell since the bit change in the cell over time is neglected. In this work we have analyzed the impact of storing random bit values in a 6T-SRAM memory cell by using probabilities of storing a one bit between the boundaries of 100% (fully unsymmetric...
As semiconductor process technology rapidly develops into deep-sub-micron or nanometer regime, the feature size of semiconductor devices continues to shrink down. As a result, the defect being able to cause a device malfunction is also becoming smaller and smaller, and even certain defect is invisible with high-resolution SEM or TEM. It makes conventional physical failure analysis (PFA) face a great...
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