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Detection of killer defects is critical to improving yields in VLSI fabrication. Bright and dark-field inspection tools detect both killer and non-killer defects, and in some cases a high level of nuisance defects may adversely affect the ability to monitor and eliminate the real ones that have a detrimental impact on device yield. E-beam inspection tools take advantage of a phenomenon referred to...
Passive voltage contrast (PVC) using electron beam (E-beam) is the popular technique of the failure analysis procedure of real integrated circuit (IC) products. When the sample is exposed on the different energy electron beam, the surface of sample is charged positively or negatively. The charging characteristic is dependent on the secondary electron yield, but that is just qualitative analysis of...
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