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During the development and qualification of a 300mm low-k/Cu back end of line (BEOL) technology, the long-term reliability of such interconnects including low-k time-dependent dielectric breakdown (TDDB), Cu electromigration (EM), Cu stress migration (SM), and Cu/low-k thermal behavior are rapidly becoming one of the most critical challenges. In this paper, a comprehensive reliability evaluation for...
We presented a transient electro-thermal analysis with STAP considering self-heating. Thermo-mechanical simulators, e.g. FEDOS, are coupled to provide appropriated input data for electromigration analysis to obtain predictive results. The presented electro-thermal results depict the high temperature gradients close to heat sources and heat sinks. Further regions of high risk of electromigration are...
Electromigration and stress migration lifetimes are characterized as a function of metal thickness for Cu interconnects fabricated using 0.13 mum process technology. The stress migration lifetime decreases as metal thickness decreases, consistent with previous studies. The electromigration lifetime shows a more complicated dependence on metal thickness. For vias landing on narrow lines, the electromigration...
We presented a simulation concept which connects microstructural mechanical properties of copper films to the overall stress distribution. The underlying model is designed by combining several earlier models which describe different microstructural contributions to stress build up. The mechanical effects of surrounding layers are also included in our analysis. The analysis of the models and simulation...
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