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In this paper, a novel circuit topology of low-noise amplifiers suitable for multi-band and multi-standard wireless applications is proposed. By employing a broadband input matching technique and vactors in the inter-stage and output matching networks, a compact LNA with continuous frequency tuning capability is realized. The proposed circuit is implemented in a standard 0.18-mum CMOS technology....
Two passive LC filters are fabricated in a 0.18 mum BiCMOS process for interference suppression in WCDMA applications. A single-pole filter achieves an insertion loss of 1dB at 2.14GHz and suppression of 12dB at 1.95GHz, while the three-pole filter has insertion loss of 8dB at 2.3GHz and provides a suppression of 23dB at 2.1GHz. Both filters are implemented using MIM capacitors and bond wire inductors
This work demonstrates the successful implementation of two single-stage low-noise amplifiers (LNAs) using 0.18 mum fully depleted silicon on insulator (FDSOI) CMOS technology. These two amplifiers utilize a metal T-gate n-MOSFET device for improved RF performance. The narrowband LNA has a measured gain of 8.2 dB, a noise figure (NF) of 1.5 dB and input referred third order intercept point (IIP3)...
A fully differential low noise amplifier with a special care for mixer input stage is presented. It considers mixer input stage to comply with DC bias condition of low noise amplifier output without bias tee using a common-mode feedback circuitry (CMFB). The proposed fully differential low noise amplifier is focused on the 915MHz an unlicensed frequency ISM band communication. This low noise amplifier...
A 38 GHz cross-coupled differential LC-VCO has been designed and fabricated using the TSMC 0.18-mum CMOS process. A differential accumulation-mode MOS (AMOS) varactor structure is used, with a tuning range of 36.7 to 38.9 GHz. The differential varactor structure provides suppression of common-mode noise on the power supply and frequency control lines
A front-end amplifier for use with an integrated differential spatially modulated CMOS photodiode using unmodified 0.18 mum technology is presented. The circuit comprises a low-noise transimpedance amplifier (TIA) connected with a high-gain limiting amplifier (LIA) and a 50 Q driver. A combination of thick and thin oxide transistors is used to allow for 2.2 V photodiode bias for enhanced opto-electrical...
A fast frequency/mode switching SSB mixer/amplifier topology is proposed for the implementation of low power multi-tone generator (MTG) in MB-OFDM UWB system. The proposed SSB mixer/amplifier topology is fabricated for the generation of mode-1 band center carrier with 0.18mum CMOS technology. The measurement result shows the 8.5ns mixer/amplifier mode switching time. The center carrier output power...
In this paper, a frequency doubler circuit is presented that converts a 0.6 GHz signal to a 1.2 GHz output using standard CMOS 0.18 mum technology. The proposed circuit uses a time-delay element and an XOR logic gate to perform the frequency multiplication and is implemented entirely on-chip. Advantages of this topology include good fundamental suppression, compact layout, and low power consumption...
A K-band low voltage, highly linear Gilbert cell mixer is presented in this paper. The goal of this work is to achieve highest possible linearity when the supply voltage is as low as 2 V. The proposed low voltage mixer topology has been experimentally verified with a down conversion mixer fabricated in a 0.18-mum CMOS process. Utilizing PMOS devices in the transconductance stage and using a 2 V supply...
This paper describes a CMOS mixer for a WCDMA front-end receiver in 0.18-mum CMOS. The mixer achieves a conversion gain of 16.6 dB and a double side band (DSB) NF of 13.8 dB. The mixer's IIP3 is 12.12 dBm. The achieved low noise figure, gain and overall IIP3 fulfill the specifications for a UMTS mixer design. The mixer consumes 5 mA of current from a 1.8-V power supply
An ultra-wideband (UWB) low noise amplifier (LNA) that consists of two cascode and shunt feedback stages is presented. Measurement results show the maximum power gain (S21) of 11.9 dB with the 3-dB band from 2 to 6.5 GHz and input/output reflection coefficient (S11 , S22) of less than -7.8 dB from 2 to 11 GHz. In addition, the fabricated LNA achieves the average noise figure (NF) of 4.5 dB from 2...
In this paper we review silicon foundry technology for the realization of highly integrated RF and analog products including wireless transceivers, TV tuners, power amplifiers and emerging mm-wave ICs. A 0.18mum platform is presented that includes modular features such as 200GHz SiGe NPNs, 30GHz RF LDMOS, 18GHz VPNP, 5.6fF/mum2 MIM capacitors, 6mum thick Al inductor metal and 8-40V extended drain...
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