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In this paper, a novel circuit topology of low-noise amplifiers suitable for multi-band and multi-standard wireless applications is proposed. By employing a broadband input matching technique and vactors in the inter-stage and output matching networks, a compact LNA with continuous frequency tuning capability is realized. The proposed circuit is implemented in a standard 0.18-mum CMOS technology....
This work demonstrates the successful implementation of two single-stage low-noise amplifiers (LNAs) using 0.18 mum fully depleted silicon on insulator (FDSOI) CMOS technology. These two amplifiers utilize a metal T-gate n-MOSFET device for improved RF performance. The narrowband LNA has a measured gain of 8.2 dB, a noise figure (NF) of 1.5 dB and input referred third order intercept point (IIP3)...
Monolithic SiGe HBT variable gain amplifiers with a feedforward configuration have been newly developed for 5-GHz applications. For bias-current control, two types of the VGA have been made: one using a coupled-emitter resistor and the other using HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with the control-voltage range from 0.4 to 2.6 V. The...
An ultra-wideband (UWB) low noise amplifier (LNA) that consists of two cascode and shunt feedback stages is presented. Measurement results show the maximum power gain (S21) of 11.9 dB with the 3-dB band from 2 to 6.5 GHz and input/output reflection coefficient (S11 , S22) of less than -7.8 dB from 2 to 11 GHz. In addition, the fabricated LNA achieves the average noise figure (NF) of 4.5 dB from 2...
The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIP3 of 5.6 dBm. Compared to previously...
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