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This work reports on the simulation of the multiplication and excess noise in a 0.2 mum thick InP multiplication region with a 1.5 mum InGaAs absorption region. The effect of ionization in InGaAs appears to make very little difference to the multiplication and noise characteristics
In this paper, theoretical results on the dependence of the single-photon quantum efficiency (SPQE) on the type of material of the multiplication region (MR) as well as its structure and width are presented. We consider SPADs with hole-injection InP MRs, electron-injection In0.52Al0.48As MRs, and hole-injection In0.52Al0.48As-InP heterojunction I 2E MRs. The model uses generalized breakdown probabilities...
We report separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm corresponding to unity gain after reach-through was achieved. Gain higher than 1000 was demonstrated without edge breakdown
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