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Room temperature CW and pulsed lasing of top-surface emitting, vertical-cavity, GaAs quantum-well lasers was achieved at approximately 845 nm. The active gain medium was four 100 AA thick GaAs quantum wells. The whole structure was grown by molecular beam epitaxy. Deep H/sup +/-ion implantation followed by annealing as used to control a vertical profile of resistivity for an efficient current injection...
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