Room temperature CW and pulsed lasing of top-surface emitting, vertical-cavity, GaAs quantum-well lasers was achieved at approximately 845 nm. The active gain medium was four 100 AA thick GaAs quantum wells. The whole structure was grown by molecular beam epitaxy. Deep H/sup +/-ion implantation followed by annealing as used to control a vertical profile of resistivity for an efficient current injection at the active region. The threshold current was 2.2 mA for CW and pulsed operation using 10 mu m diameter lasers. Differential quantum efficiency was about 20%. Minimum threshold current density per quantum well of 360 A/cm/sup 2/ was obtained.<<ETX>>