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This study describes the fabrication of hybrid SAM/HfOx gate dielectrics by the radical oxidation in molybdenum disulfide (MoS2)field-effect transistors (FETs). The fabrication process involves the radical oxidation to form HfOx at the surface of metallic HfN, SAM formation by immersion, and deterministic transfer of MoS2 flakes. A subthreshold slope (SS) of 75 mV/dec and small hysteresis were demonstrated...
In this paper, a compact model for the gate current in HKMG nMOS transistors is presented. The carrier transport through the multi-stack gate dielectrics of HKMG MOS transistors is shown to be dominated by the Trap Assisted Tunneling and Poole-Frenkel conduction mechanisms. Both these mechanisms occur simultaneously and each is dominant in a particular gate voltage range. The interdependence and simultaneity...
We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous FETs by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 layer. Pre-patterned electrodes offer the possibility of reducing the exposure time of exfoliated flakes to oxidant agents with respect to top-contacted devices and maximize the accessible area for sensing applications...
In this paper we present the recent advances in the understanding of microscopic mechanisms driving the resistive switching in ReRAM devices using ab initio theoretical methods. We highlight the complex interplay between interface reactions and charge injection in the generation of oxygen Frenkel pairs during the forming step. Energy barrier calculations suggest that the formation/destruction of the...
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