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An investigation of radiated reliability of HBT and MOSFET which fabricated on 0.35 μm SiGe BiCMOS technology is presented under dose rates of 500 mGy(Si)/s and 1 mGy(Si)/s with a 60Co γ irradiation source. Gummel characteristics of SiGe HBT and transfer characteristics of MOSFET are measured before and after irradiation. Base current (IB), leakage current (IOFF) and threshold voltage (VTH) are extracted...
Forward body bias method for evaluating total ionizing dose (TID) effect in deep sub-micron CMOS integrated circuits is proposed. Without traditionally complicated, time consuming and costly transistor radiation modeling or chip irradiation test, it is demonstrated here that by applying equivalent forward body bias on susceptible NMOS transistors, TID effect evaluation for deep sub-micron CMOS ICs...
The effects of fast neutron radiation up to flux of 1014 cm−2 (1 MeV equivalent flux) upon the turn-on and forward static characteristics of MOS-Controlled Thyristor (MCT) are described in this work, based on physics-based 1-dimension analytical calculation and 2-dimension Silvaco simulation. It is reported for the first time that dependency of on-state specific resistance (Ron) upon neutron flux...
Single Event Effects (SEE) in a stand-alone 1T1R Resistive Random Access Memory (RRAM) are experimentally demonstrated by using pulsed laser irradiation. No bit errors are observed in the RRAM array at an equivalent LET of more than 100 MeV.cm2/mg, indicating that the RRAM memory cells are robust against SEE. The most sensitive regions are the row decoders of the peripheral circuit, with a threshold...
A Testing system for transient irradiation experiment is designed to explore the transient ionizing radiation effects in an 8bit three state output bidirectional buffer. Signal responses of this circuit irradiated with high dose rate gamma rays are obtained. In particular, changes of output and supply voltage for the circuit are focused. The experiment results show that the recovery situation of signal...
The performances of 4H-SiC power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with defects induced by cosmic radiations are studied in this paper. By SRIM and SILVACO T-CAD simulations, the radiation effects on the electrical parameters of the device are observed. The results indicate that the radiations from different directions induce defects in different regions of the device. The...
In this paper, the total ionizing dose effects on electrostatic discharge (ESD) protection devices are investigated. Irradiation is conducted with 1.5 MeV He+ from a RPEA 4.0 MV Dynamitron accelerator, and the Barth 4002 transmission line pulse (TLP) tester is used for measurements. The ESD devices considered are a P+/NW diode, a Zener diode, gate grounded NMOS (GGNMOS), and lateral silicon controlled...
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