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In this study, we perform a top gate field effect transistor by using the integration of novel materials such as graphene as active channel and fluorinated graphene as dielectrics on flexible Polyethylene terephthalate (PET) substrate. These device shows high carrier mobility (∼969 cm2/v.s) at a drain bias of +0.5V. It shows good mechanical flexibility and electrical stability after bending measurement...
In this paper, we studied the Al bondpad qualification methodologies and application in backend process optimization and improvement so as to provide good quality bondpads and wafers in wafer fabrication. The three Al bondpad qualification methodologies including OSAT, SLAT and Wafer Die Sawing Test were introduced and discussed.
In wafer fabrication, it is important for analyst to be equipped with the mindset of deep dive towards uncovering the underlying “hidden and real” defect even after finding some anomaly that appears to be the root cause. This is critical as inexperience analyst may regards the 1st anomaly seen as the cause of the low yield issue and this will lead to wrong process fix by the process integration. In...
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