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A V-band transformer-base power amplifier (PA) is implemented in 40nm CMOS. It is a three-stage PA with eight-way transformer combining at output stage. This PA uses the transformers with dc path of metal-one and neutralization technique to improve the passive loss and asymmetric problem, as well as the gain and stability. The PA achieves a measured saturated output power (Psat) of 19.8 dBm with 18...
A multi-mode multi-band (MMMB) power amplifier module with integrated duplexer (PAMiD) is developed for mobile handset applications. To reduce size and improve RF performance of Tx front-end, the PAMiD consolidates most of the post-PA networks as well as PA block in a single module. This paper summarizes the RF requirements and challenges addressed in recent years that pursue PAMiD development, and...
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