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This paper presents an enhanced identification technique for the behavioral modeling of radiofrequency power amplifiers using twin-nonlinear two-box structures. The proposed technique intentionally uses low nonlinearity order in the memoryless block and allows for performance degradation in the first box of the model. This helps reducing the coefficients dispersion of the second box, and therefore...
This paper presents a method for recycling the wasted power in the isolation resistor of a Wilkinson power combiner when the input signals are not identical. An RF-dc rectifier is used to replace the isolation resistor of the Wilkinson power combiner to recycle the power that would originally be dissipated in the isolation resistor. To validate the proposed technique, a prototype modified Wilkinson...
This report describes recent progresses in development and production of GaN HEMT based power amplifiers in Wavice Inc., such as discrete transistors, s-band internally matched packaged transistors, 5W 3.5 GHz Doherty amplifiers, S-band Tx module and 4kW C-band high power amplifiers. Especially for s-band internally matched transistors and power amplifiers, more than 1500 products have been produced...
We present a fully integrated 2×2 MIMO CMOS LTE RF transceiver along with multi-band InGaP/GaAs HBT power amplifiers for LTE-A small cell (femtocell) base stations. The transceiver features highly integrated LNAs and drive amplifiers with 24 individual RF I/O pins. The multi-band PAs achieves ACLR <-45dBc at 25dBm with PAE >38% at 33dBm by employing a third-order intermodulation distortion (IMD3)...
This manuscript describes the Q-band 90nm-CMOS receiver design where the 33∼50GHz RF-LNA, actively-biased double-balanced mixer, 10GHz IF amplifier, wideband frequency tripler and power amplifier in the LO chain are all integrated into one single chip. With overall power consumption of 170mW under 1.2V bias, the measured conversion gain is 15dB, noise figure close to 8dB, input-referred P1dB around...
This paper contributes a design of an ultrawideband, high efficiency and linearized 10 W GaN-HEMT power amplifier (PA). A systematic design approach using simulation-based source- and load-pull analyses in order to find optimum load and source impedances was applied for the proposed PA. Under continuous wave (CW) large-signal measurements, the design is confirmed by experimental results, which show...
In mobile phone systems, the 4th generation is widely prevailing in 2017, and in 2020, it is expected that the 5th generation (5G) will start to prevail. In both generations, a linear power amplifier is used. The linear amplifier, in spite of the name, operates non-linearly. Here, non-linear operations of the linear amplifier and their effects on the linearity characteristics are stated.
This paper presents a differential W-band power amplifier combined with LC balun in a commercial 0.13 μm SiGe BiCMOS technology. The proposed amplifier consists of one cascode stage and two common-emitter stages. In the cascode stage, the bypass capacitor at the base node of the upper transistor, which is sensitive to the amplifier stability, is analyzed. Measured gain of over 15 dB is achieved from...
This paper presents a 300 W GaN power amplifier operating in the LTE band 7 (2.62∼2.69 GHz). From the loadpull simulation, optimum impedances of the GaN HEMT at the fundamental frequency and the second harmonic frequency are extracted for a maximum output power. The matching circuits that give the nearly optimum second harmonic impedances are implemented on a titanate substrate with a high dielectric...
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