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L-2L de-embedding method was proved accurate at millimeter-wave (mm-wave) frequencies around 60GHz. However, it was never quantitatively compared to a more complicated method at frequencies as high as 100GHz. In this paper, L-2L and TRL de-embedding methods are compared by applying both on test structures fabricated using CMOS 65nm process. More focus will be given to the W-band frequencies by comparing...
A high-gain flip-chip packaged dielectric resonator antenna (DRA) for THz imaging applications is proposed in this work. The THz DRA is composed of a high-resistivity silicon dielectric resonator fabricated in an integrated-passive-devices (IPD) technology and a feeding patch realized on a 0.18-μm CMOS chip. The DR is flipped and thermo-compressively bonded to the chip by gold microbumps. With a 625-μm...
In this work, a 300-GHz 7×7 imaging detector array has been developed with a 65-nm CMOS technology. Each pixel is made of an identical 300-GHz common-gate differential direct detector integrated with a patch antenna. The detector exhibits a 1,200 V/W responsivity and a 20 pW/Hz05 NEP by simulation. The fabricated chip area is 4×4 mm2 including wire-bonding pads. Employing the fabricated 7×7 detector...
A direct RF undersampling reception has been focused to realize compact and low power consumption receiver. This architecture requires a higher gain LNA than the conventional one. In this paper, we fabricate a Ku-band direct RF undersampling receiver together with a power switching (intermittent-mode) LNA to reduce the power consumption. The DC power of intermittent-mode LNA turns off during the hold...
This paper presents a frequency doubler that operates at W-band and D-band frequencies between 100GHz to 123GHz. An optimized buffering method is proposed to achieve saturated output power as high as 5.5dBm with over 60dBc rejection of the fundamental frequency at −8dBm input power. The overall circuit power consumption is 116mW. The doubler was designed and implemented using 65nm CMOS technology.
We present a fully integrated 2×2 MIMO CMOS LTE RF transceiver along with multi-band InGaP/GaAs HBT power amplifiers for LTE-A small cell (femtocell) base stations. The transceiver features highly integrated LNAs and drive amplifiers with 24 individual RF I/O pins. The multi-band PAs achieves ACLR <-45dBc at 25dBm with PAE >38% at 33dBm by employing a third-order intermodulation distortion (IMD3)...
This manuscript describes a 34–42GHz single-sideband 90nm-CMOS transmitter where PLL has been integrated into the LO chain and, with I/Q input and two-stage up-conversion, a 30dB image-rejection ratio is achieved within the intended bandwidth. This transmitter's wideband tuning range is made possible by the use of additional capacitor on the VCO, and the phase noise of the resulting RF output is in...
A 60GHz integrated antenna switching architecture is presented for millimeter-wave transceiver system. This circuit topology re-uses the last stage's transistor of power amplifier (PA) and the first stage's transistor of low-noise amplifier (LNA) as the switching elements, and the matching blocks for PA and LNA. A two-stage LNA and a two-stage PA integrated together as antenna switch is fabricated...
A Ka-band up-conversion mixer with inductive degeneration is implemented using 65 nm CMOS process. The mixer is based on a double-balanced Gilbert-Cell active mixer due to its high conversion gain and isolation. The degeneration inductor is employed to resonate with the parasitic capacitance of the input transistor. That can achieve easier input matching and noise reduction caused by gate-induced...
This paper presents a dual-band LC voltage switched VCO in 0.18 μm CMOS technology, which can be regulated between 2.4–2.9 GHz and 4.2–5 GHz frequency band. The proposed LC VCO is realized employing a tunable LC tank, including switched capacitors and differential inductor with switched transistor, which makes the dual-band operation. Also, the LC VCO is implemented with low phase noise performance...
Terahertz imaging sensing provides numerous attractive applications in different areas, for example, biology and medicine. CMOS technology benefits an imaging system in low cost and a small form factor. The technology advance is technically viable for circuit design in such high frequencies. Lossy silicon substrate, however, still degrades system performance. We will discuss the techniques of performance...
High-linearity wideband transmitter with a high linearity Mixer and RF-PGA is proposed for 802.1af/ah long-range Wi-Fi standards. The transmitter is direct conversion architecture while supporting 1/2/4/6/8/16 MHz signal bandwidth for 802.11af/ah. Implemented in a 40-nm CMOS process with the chip size of 1.0 mm × 1.9 mm, the full transmitter shows a conversion gain range of 31.5 dB with 0.5 dB step...
A wideband noise-cancelling low noise amplifier is implemented in 0.13-μm CMOS technology. The amplifier is composed of a common gate amplifier and a common source amplifier working as a BALUN and a noise cancelling stage. A 11:1 transformer is located at sources of the amplifier. The transformer works as source degeneration for low noise in the common source amplifier and increases Vgs at the common...
This manuscript describes the Q-band 90nm-CMOS receiver design where the 33∼50GHz RF-LNA, actively-biased double-balanced mixer, 10GHz IF amplifier, wideband frequency tripler and power amplifier in the LO chain are all integrated into one single chip. With overall power consumption of 170mW under 1.2V bias, the measured conversion gain is 15dB, noise figure close to 8dB, input-referred P1dB around...
This paper describes a CMOS X-band frequency-modulated continuous wave (FMCW) generator IC for radar applications. The FMCW generator is based on a frequency synthesizer-N structure with a delta-sigma modulator. To provide stable bandwidth switching timing under loop parameter variations, an adaptive bandwidth control technique is proposed. In addition, a waveform generator is integrated to generate...
The data rate of wireless communication is approaching that of fiber optics. The key technology for speeding up wireless communication is terahertz. We demonstrated ultrahigh-speed wireless communication using a terahertz CMOS transceiver. In this paper, social and technical backgrounds of wireless communication using a 300-GHz band in terahertz are discussed. The potential communication speed in...
This paper presents a dual-mode signal generator using a fractional-N phase locked loop (PLL) and frequency-sweep modulator (FSM) for X-band Doppler and frequency modulated continuous wave (FMCW) radar sensor applications. The key function of the proposed structure is a frequency sweep modulator (FSM), which changes the PLL division ratio to sweep output frequency according to the input control code...
This paper presents our recent studies on CMOS front-end circuits for high speed optical links. The circuit topologies of both transimpedance amplifier (TIA) and modulator driver (MD) are discussed for achieving wideband operation in PAM-4 modulation using advanced CMOS technology. Also, issues of integration of the circuits with silicon photonic devices such as the Ge-on-Si photo diode (PD) and silicon...
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