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The noise mechanisms in graphene and MoS2 are quite different. The noise characteristics of MoS2 transistors could be described by the McWhorter model. The range of the trap densities responsible for the 1/f noise in MoS2 extracted from the noise measurements is from ∼1018 eV−1cm−3 to ∼ 6×1020 eV−1cm−3. The smallest noise level and smallest trap density was found for multilayer MoS2 transistors with...
Graphene material exhibits a number of outstanding electronic and mechanical properties that make it very attractive for micro and nanoelectronic applications. Considering graphene field effect transistors (GFETs), considerable efforts were made during the recent years, and the devices at state of the art show impressive high frequency cut-off frequencies. The interest of GFET is particularly strong...
We present an investigation of shot noise in graphene-based Hall sensors, with the purpose of evaluating their detection limit and of developing strategies to improve their characteristics. We perform measurements on two devices, one with a defective contact that could however be used as a gate to control the carrier density in the device and the other with all contacts working. We discuss the results...
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