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We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray diffraction peak in θ–2θ scan, and nearly transparent optical response. This work open a window for ex-situ studying quantum size effect in metal film.
We report the perovskite:SWNTs solar cells fabricated using solvent-solvent extraction (SSE) method at room temperature. Small quantities of Single-walled carbon nanotubes (SWNTs) are incorporated into perovskite Methylammonium lead halide (CH3NH3PbI3) layer, and enhance the power conversion efficiency (PCE) of the perovskite solar cell from 8.5% to 10.6%. SWNTs act as hole transport channels boosting...
In this article, we report a Field Effect Transistor (FET) with Aluminum doped graphene channel. The graphene is doped by spin coating a chemical dopant solution which tailored the electrical properties of graphene, such as transfer characteristics and output characteristics. The Doping of graphene was successfully verified by X-Ray photoelectron spectra (XPS) measurements. The testing results showed...
Metamaterial device with double layers of split ring resonators (SRRs) on flexible substrate is proposed for building a new terahertz (THz)-wave near-field imaging system with real-time performance. The SRRs work as an array of probes that reserve the object near-field information and transfer it to the detection system, which is based on the frequency up-conversion with nonlinear crystal DAST (4-dimethylamino-N-methyl-4-stilbazolium...
We have fabricated titanium nitride (TiN) thin films on sapphire substrates by pulsed laser deposition (PLD) technique, and excited surface plasmon polaritons (SPPs) on TiN thin films by energy transfer from dye molecules. The system was fabricated by depositing a thin polymer layer containing rhodamine 6G (R6G) on a TiN thin film, separated by a thin spacer made of silica. The SPPs were excited by...
Layer undulation of InGaAs/GaAs/GaAsP strain-balanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can...
Printed electronics enable the fabrication of large-scale, low-cost electronic devices and systems, and thus offer significant possibilities in terms of developing new electronics/optics applications in various fields. Additionally, reducing the thickness of thin-film electronic devices is a primary goal in the field of flexible electronics, because it would improve the flexibility and lightness of...
In this work, a comparison between the electro-optical characteristics of CNT random networks obtained through inkjet printing and spray-deposition on flexible substrates is presented. Transmittance values are similar in both fabrication techniques; however, the sheet resistance of the inkjetted layers diverges significantly with respect to the reference spray-deposited thin film. To overcome this...
Preserved the exceptional properties of graphene, the graphene nanowall (GNW) with inter-networked vertically oriented three-dimensional graphene morphology possess superior potential in constructing advanced microsystems. In this paper, GNW thin film was synthesized through the microwave plasma-enhanced chemical vapor deposition method on SiO2/Si wafer and a spiral GNW microelectrode was further...
This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever...
The Pd/SnO2/Al2O3/CuO/Ag/SnO2/Al2O3/CuO/p-Si/Al tandem p-i-n diodes with nanorod structure and addition of silver interconnecting metal layer were studied. The added interconnecting metal layer influences the material characteristics and leads the developed device to have a high relative sensitivity ratio of ∼2185% to 3000 ppm CO2 ambient gas. The response time of 20 sec is also fast. Thus, it has...
Physiological characteristics of cells are affected by the extra-cellular matrix (ECM). Previous research have demonstrated that both biophysical and biochemical properties of ECM can determine cell behaviors such as cell spreading and morphology. Current studies on the biophysical factors have been largely related to the substrate rigidity and nano-roughness, yet how the three-dimensional (3D) micro-curvature...
We demonstrated InGaN/GaN multiple quantum well (MQW) solar cells with vertical structure using aluminum (Al) reflectors in this study. The Al reflectors at the bottom of the solar cells can reflect large amount of photons back into the absorber layer, which greatly enhanced the photovoltaic properties of the MQW solar cells. These solar cell devices exhibit excellent performances, including an open-circuit...
Molybdenum-Tungsten (MoxW) alloy films were deposited on SiO2 substrates by reactive sputtering. Direct electroplating Cu on Molybdenum-Tungsten alloy films and annealing in N2 were carried out. In this study, the effect of electroplating time and annealing temperature on the structural, plating and wetting ability of Molybdenum-Tungsten alloy films was investigated. The films were characterized by...
Heat-resistance of novel encapsulating materials made from thermosetting imide/silsesquioxane nanocomposites are demonstrated in SiC-SBD packages, which are die-attached with a sintered Ag paste. The test specimens are exposed to thermal cycling between −50°C and 250°C and humidity resistance evaluation test at 121°C, 0.19MPa, 95%Rh. The results reveal that the excellent heat and humidity-resistance...
One of the limitations of carbon nanotube (CNT) field emitter arrays (FEA) is the non-uniformity of total emission current contribution from each emitter due to geometry variation among CNT field emitters. We previously used a ballast resistor to ballast each emitter's current contribution to improve the reliability and stability of our CNT field emission (FE) cathode with coaxial gate. However, this...
GaAs nanowires fabricated by an anodic etching have some advantages over conventional dry crystal growth and wet chemical dissolution techniques in terms of their formation. However, undesired electrical insulating behavior caused by deep interface states is observed. It is known that the interface states originate from the dissociated As atoms between GaAs core and Ga2O3 outer layer. Here, we investigated...
Glass is one of the essential materials for optical devices due to its transparency. It usually loses about 4% of energy of an incident light at its interface. In order to suppress its reflection, moth-eye structure, which is the nanoscale tapered pillar array, has a remarkable anti-reflection performance. In its fabrication method, nanoimprint lithography has been paid attention due to the availability...
A process of silver nanowire transparent conductive films has been developed to synthesize by organic needle-shaped precursor painting reduction. Needle-shaped nanowire precursors are simply synthesized by ultrasound irradiation of silver oxide and carboxylic acid as starting materials. The aspect ratio of the needle-shaped precursors is chenged by condition of ultrasound irradiation. Silver nanowires...
Single-Walled Carbon Nanotubes (SWCNTs) have been shown to be a promising candidate for flexible electronics, especially logic circuits. However, very little study on SWCNT based analog circuit elements, such as amplifiers and comparators, on flexible substrates has been reported. For practical applications, fully functional flexible electronic devices must have an analog input circuitry to achieve...
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