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Molybdenum-Tungsten (MoxW) alloy films were deposited on SiO2 substrates by reactive sputtering. Direct electroplating Cu on Molybdenum-Tungsten alloy films and annealing in N2 were carried out. In this study, the effect of electroplating time and annealing temperature on the structural, plating and wetting ability of Molybdenum-Tungsten alloy films was investigated. The films were characterized by...
In this study, low-energy microwave annealing(MWA) is used to activate the germanium material which is new promising and might replace silicon in the future. A novel MWA method with two steps applies to germanium for solid phase epitaxial recrystallization(SPER) and dopants activation. The purpose of the first step MWA at 2P(1.2kW) for 75 sec is to quickly repair the destroyed crystal lattices which...
This paper discusses the benefits of different N-drift doping concentration and terminal guard ring diversification on PT-IGBT(Punch Through) breakdown characteristic. The concept IGBT structure consists of MOS components and bipolar components. The former provided by the high-frequency effect, which provides high voltage. In order to increase the breakdown voltage, the N-drift layer concentration...
The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device...
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