The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray diffraction peak in θ–2θ scan, and nearly transparent optical response. This work open a window for ex-situ studying quantum size effect in metal film.
In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta2O5 film with a high film density was obtained, and a fabricated Cu/Ta2O5/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a...
The remarkable properties of two-dimensional materials have generated great enthusiasm among researchers. Very recently, MoS2, the representative of transition metal dichalcogenides, has triggered increasing attention and hold huge potential for many applications. Although the tribological properties of MoS2 has been studied for decades, the atomic-scale motion between tip and MoS2 surface is quite...
We investigate the analog figures-of-merits (FOMs) of inversion-mode and junctionless nanowire transistors regarding to the gate metal work-function variation using 3D TCAD simulations. The junctionless device shows more immunity to work-function variation on analog FOMs compared to the inversion-mode counterpart. The correlation between parameters affects the immunity of variation on analog FOMs...
This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever...
The Pd/SnO2/Al2O3/CuO/Ag/SnO2/Al2O3/CuO/p-Si/Al tandem p-i-n diodes with nanorod structure and addition of silver interconnecting metal layer were studied. The added interconnecting metal layer influences the material characteristics and leads the developed device to have a high relative sensitivity ratio of ∼2185% to 3000 ppm CO2 ambient gas. The response time of 20 sec is also fast. Thus, it has...
Molybdenum-Tungsten (MoxW) alloy films were deposited on SiO2 substrates by reactive sputtering. Direct electroplating Cu on Molybdenum-Tungsten alloy films and annealing in N2 were carried out. In this study, the effect of electroplating time and annealing temperature on the structural, plating and wetting ability of Molybdenum-Tungsten alloy films was investigated. The films were characterized by...
Resistance switching of metal nanogap structures were observed using a scanning tunneling microscope (STM) equipment. Clear negative differential resistances in current-voltage curves and repeated high and low resistance changes were also observed in metal a surface/tunneling gap/metal STM tip junction like as static metal nanogap structures which are fabricated on insulator substrates. This results...
In this work we investigate properties of ultra-narrow photoluminescence lines originating from recombination of excitons trapped by short-range potential fluctuations, caused by alloy disorder in GaAs/GaNAs core/shell nanowires. From power-dependent photoluminescence measurements we show that the emission behavior is consistent with biexciton-exciton cascade recombination in quantum dots. We also...
Ultra-wide bandgap (>3.4 eV) oxide semiconductors can offer opportunity for opening application fields for sustainable development of the community. In the presentation, recent evolution of wide bandgap semiconductors based on α-Al2O3, α-Ga2O3, α-In2O3, and rocksalt MgZnO will be reviewed.
Solar-driven photocatalytic water splitting to produce hydrogen (H2) as the future energy has triggered considerable interests. In this paper, we report the growth of ultrathin SnO2 nanosheets (SnO2 NSs) on mesoporous SiC nanofibers (SiC NFs) forming a core-shell hierarchical architecture via a simple hydrothermal method. Without noble metal as co-catalyst, the hydrogen evolution efficiency of SnO...
Mechanism of a recently reported new etching method of transition metal using ethanol gas and oxygen and argon neutral beams at low temperature was investigated by first-principles calculation based on density functional theory. Tantalum etching was studied. It was found that adsorption of ethanol on both of tantalum oxide and metallic tantalum. Then “hydrogen movement” reaction can occur by argon...
MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO...
Increasing power densities within microelectronic systems place an ever increasing demand on the thermal management. Thermal interface materials (TIMs) are used to fill air gaps at the interface between two materials, greatly increasing the thermal conductance when solid surface are attached together. The last decade has provided significant development on high-performing TIMs, and this paper makes...
In this paper we review our recent results on optical properties of coaxial nanowires (NWs) based on dilute nitride alloys, such as GaAsN and GaNP. We show that these structures have a high structural and optical quality, and can potentially be used as polarized nano-scale light sources that emit linearly polarized light with the polarization direction perpendicular to the wire axis even in zinc blende...
Commercially available micron-sized Ag flake particles and submicron-sized Ag particles were used to make Ag paste. The Ag paste was used to connect Si dies to Ni-Ag plated Cu substrates to achieve die-bonding joint for high temperature application. The contact between die and Ag paste was affected by the loading pressure, and was realized with only 0.2 MPa pressure. And the shear strength depended...
The fabrication of a conductive 3D copper micropattern was studied by 3D printing method based on layer-by-layer laser direct writing using a copper nanoparticle ink toward 3D interconnection.
This letter investigates the effect of negative bias stress induced abnormal degradation in amorphous InGaZnO thin-film transistors (TFTs) at high temperature. Drain current-gate voltage (ID-VG) and capacitance-voltage (C-V) measurements are employed to analyze degradation mechanism. High temperature negative bias stress lead to not only a negative parallel shift in ID-VG but also a C-V distortion...
Lateral ReRAM (Resistive Random Access Memory) made of Cu/WOX/Cu was formed, and its operation was investigated in a transmission electron microscope (TEM) to elucidate the switching mechanism. Resistive switching behavior was realized in TEM. At the Set process changing the device state from high resistance state (HRS) to low resistance state (LRS), a Cu conductive filament grew up from the cathode...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.