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2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)]
Nonpolar AlGaN light-emitting diodes have been attracting much attention due to their potential for realizing optoelectronic devices with high efficiency and stability. However, few studies have been reported on the optical properties of nonpolar AlGaN quantum wells (QWs) on sapphire because of the difficulty in the growth. Here, we report the fabrication of an a-plane AlGaN QW on r-plane sapphire...
We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I–V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I–V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared...
Two-wavelength excited photoluminescence, a non-destructive and non-contacting method for defect study has been used to investigate the AlGaN multiple quantum well (MQW) emitting at ∼260 nm. We have succeeded to detect the non-radiative recombination (NRR) centers in both wells and barrier layers using a below-gap ex- citation (BGE) light of 1.17 eV. The PL intensity of both well and barrier layers...
By comparing differences between characteristics of Al0.24Ga0.76N thin film surfaces irradiated with ultraviolet (UV) light-assisted CF4 plasma and with CF4 plasma, we clarified the effect of UV light irradiation on the surfaces. A black light lamp, which emitted photons with energies of 3.1 to 4.1 eV, was used as the UV light source. The UV light irradiation under a high gas pressure of 13 Pa changed...
GaN-on-Si MOSHEMTs are fabricated with gate-recessed structure. It is found that surface damages introduced by plasma bombardment during recess etch at oxide-semiconductor interface cause instability of threshold voltage of the devices. To eliminate the surface damages, KOH passivation is applied and the effect is studied in this report. Hysteresis is inhibited and the flat-band voltage shift reduces...
The vertical leakage current of AlGaN/GaN high-electron-mobility transistors on Si substrates was studied. The effects of the Al content in the AlGaN buffer layer and pit density on the vertical leakage current were not as significant as the effect of the initial AlN layer's crystal quality.
In this work, we investigated the effect of shape irregularities of drain electrode on the breakdown voltage of AlGaN/GaN HEMTs. We found that some random devices having rough metal edge definition tend to have lower breakdown voltages. In addition, these devices showed localized high intensity luminescence observed under near pinch-off condition. This is likely due to electric field concentration...
The impact of AlGaN barrier recess on the leakage, forward voltage, and dynamic characteristics of Al-GaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been investigated. With 4-nm remaining AlGaN barrier in the recessed anode region, GET-SBDs show a median leakage current of 1 nA/mm and a forward voltage of 1.26 V. We found out that the leakage current of GET-SBDs gradually...
A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2240 cm2/Vs. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively...
AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs), using TiO2 as gate dielectric, are proposed. The dielectric constant of the TiO2 gate-dielectric layer extracted from C-V measurement is about 20.57. This AlGaN/GaN MOS-HEMT design exhibits enhanced device performances. As compared to a conventional HEMT, superior improvements are achieved in the MOS-HEMT herein. The...
If vertical AlGaN FET on Si substrate is realized, high power, high voltage FET beyond SiC and GaN FET is obtained due to the high band gap and high breakdown voltage. For realizing vertical AlGaN FET on Si substrate, conductive AlN buffer layer on Si substrate is indispensable, because AlN buffer layer is necessary for growing AlGaN on Si substrate to avoid large size melt-back of Si substrate by...
Pulsed I–V measurements and TCAD simulations were used to study the effect of the source field-plate on the dynamic ON-resistance (RDS-ON) of AlGaN/GaN MIS-HEMTs. Several field-plate variations were studied: starting from a basic configuration with only a gate field-plate up to a configuration with one gate field-plate and two levels of source field-plate. Different field-plate lengths were also measured...
In order to examine the feasibility of full wide-bandgap GaN-based converters in aerospace power conversion applications, this paper proposes a monolithic DC-DC buck converter design with integrated high-side gate driver and over-current protection based on AlGaN/GaN MIS-HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally-on and normally-off AlGaN/GaN...
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