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2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)]
The effects of growth conditions choice and post-growth layer exposure to hydrides have been studied in InP/AlInAs self-organized nanostructures grown by low pressure MOVPE. Here we show how the size and density of low-dimensional structures can be manipulated and controlled by changing growth parameters. The final nanostructures shape is governed by influence of hydrides exposure. For example, the...
By comparing differences between characteristics of Al0.24Ga0.76N thin film surfaces irradiated with ultraviolet (UV) light-assisted CF4 plasma and with CF4 plasma, we clarified the effect of UV light irradiation on the surfaces. A black light lamp, which emitted photons with energies of 3.1 to 4.1 eV, was used as the UV light source. The UV light irradiation under a high gas pressure of 13 Pa changed...
The influences of the growth temperature of the buffer layer and the growth rate of AlN at 1300 °C on AlN crystalline quality were investigated. By using a horizontal high-flow-rate metal organic vapor phase epitaxy reactor, the growth rate of AlN was increased linearly up to 18 µm/h with increasing trimethylaluminum input partial pressure in spite of the high growth temperature of 1300 °C; the full...
Realization of wet fabrication process for small-molecule laminated structures are attractive to spread the application field of high performance organic devices due to large area capability and cost effective mass production. In this study, we present Alq3/NPB small-molecule laminated structures with suppressed interface mixing by electrospray deposition (ESD). It was shown that ESD can deposit Alq...
In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg1−xCdxTe epitaxial film inhomogeneous distribution of...
The reproducibility of self-catalyzed molecular beam epitaxy growth of GaAs nanowires (NWs) on oxide-covered Si(111) substrates depends on the consistent quality of the oxide layer. We have developed an effective chemical treatment method to create oxide surfaces that are conducive to the nucleation of vertical GaAs NWs on Si(111). Here we demonstrate a high yield, exceeding 90%, of vertical GaAs...
We investigated the surface morphologies of nonpolar m-plane AlN homoepitaxial layers grown by the flow-rate modulation epitaxy (FME) method. As source supply sequences, we adopted conventional metal-organic chemical vapor deposition (MOCVD) and three types of FME: group-III-source FME, group-V-source FME, and FME with groups III and V alternated. We found that each type of FME could improve the surface...
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