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2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)]
We demonstrate the MOVPE growth of a high-quality InGaAsP-MQWs on an InP membrane directly bonded to a SiO2/Si substrate (InP template). PL, XRD and AFM measurements confirmed the high crystal quality of the epitaxial layers. Moreover, we fabricated a membrane DR laser using this growth method. We achieved the first demonstration of the continuous wave operation of a laser fabricated by using MQWs...
Heteroepitaxial, or metamorphic, growth enables us to overcome limitations on the performance of semiconductor devices caused by the lattice-matching restriction. We have demonstrated high-crystalline-quality metamorphic grown InGaAs and GaAs/Ge layers on GaAs and Si substrates, respectively. The InGaAs layer on GaAs allows us to make laser diodes operating at 25 Gbit/s with high characteristic temperature...
We present the design of an electrically pumped metallic cavity laser based on optical, electrical and thermal simulations. By inserting an InAlAs blocking layer, leakage current is effectively suppressed, leading to 50% reduction of threshold current together with better thermal stability. Through combined optical and electrical analyses, the insulation layer thickness is set to be 60 nm, where the...
We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B+ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with...
We investigated lasing characteristics of 1.3-µm npn-AlGaInAs/InP transistor lasers under applying the collector-base voltage VCB with common base configuration. By simultaneous measurement of laser and transistor characteristics, it was revealed that the Early effect of transistors was main reason of threshold current degradation and output power reduction. We also observed that the red-shift of...
We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-µm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current...
We report monolithic, electrically-pumped tunable 1060-nm VCSELs with a high-contrast grating metastructure as the highly reflective tunable mirror. Single-mode lasing with CW operation is demonstrated up to 85°C providing output power larger than 1.3 mW at room temperature. A continuous tuning range of 35 nm is achieved with microelectromechanical actuation of the high-contrast grating mirror, showing...
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