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2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)]
Submonolayer-grown semiconductor nanostructures are promising for high power and high speed laser devices. They are formed by a cycled deposition of the active material with a thickness well below the critical thickness for Stranski-Krastanov transition and well below one monolayer (ML), alternating with several ML thick matrix material. They were successfully implemented in high speed (>25 Gbit/s)...
We have investigated the microscopic mechanism of the double-state lasing (simultaneous lasing at the ground and excited states) behavior observed in InAs/GaAs quantum dot (QD) laser diodes (LDs). Spontaneous emission is measured from a window structure on top of QD LDs, as well as amplified spontaneous emission from a facet. Experimental results are analyzed with the simulation results based on a...
We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe...
Plasmonic nanolasers have made rapid progress in recent years, with room temperature lasing being achieved in the ultra-violet to visible wavelength range using ZnO, GaN and CdS semiconductors. However, the binding energy of excitons for semiconductors such as GaAs that emit in the technologically important near infrared region is insufficient to be stable at room temperature. Quantum dots act as...
We studied polarization anisotropy of the electroluminescence (EL) and net-modal gain in 40-stacked InAs/GaAs quantum dot (QD) laser device structures. Since the electronic coupling between the QDs enhanced the transverse-magnetic (TM) polarization component, the [110] waveguide devices exhibited a laser oscillation from the ground state in not only transverse-electric (TE) component but also TM component...
Utilizing colloidal quantum dots (CQDs) as a gain material in a passive two-dimensional photonic crystal (PC) backbone structure, we have experimentally demonstrated room-temperature lasing operation at band-edge modes. A silicon nitride PC slab on silica substrate contains a square lattice array of air-holes, which is designed to have an in-plane, M-point low index band-edge mode. The air-hole array...
We present epitaxial lateral overgrowth method (ELOG) as a means of achieving good quality III–V materials on silicon (Si). In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III–V layer and silicon. In the corrugated epitaxial lateral overgrowth (CELOG) technique recently developed in our laboratory, it is possible to obtain direct...
We report on high speed InAs/GaAs quantum dot lasers at 1.3 µm range. Small signal modulation response measurement for fabricated ridge laser exhibited record high maximum 3 dB bandwidth of 13.1 and 8.8 GHz at 25 and 85°C, respectively as 1.3 µm-range QD lasers. We adopted higher QD density not only to increase differential gain but also to reduce the barrier thickness in between QD layers to 30 nm...
We present a study of metalorganic vapour phase epitaxy of ternary InAsP quantum dots on AlGaInP/GaAs. The properties of InAsP QD laser structures were compared with reference samples containing binary InP QDs. Based on X-ray diffraction, the molar fraction of As in InAsP QDs was estimated to be ∼25%. Room temperature liquid contact electro-luminescence measurements revealed a long wavelength shift...
We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B+ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with...
GaAs-based InAs/InGaAs quantum dot (QD) mode-locked lasers (MLLs) have been fabricated and characterized. The fundamental mode locking at 17.08 GHz was obtained, with the second harmonic mode locking at 34.165 GHz. When keeping the QD MLL gain section bias current (Igain) constant at 200 mA, two-state lasing was observed by changing the reverse bias at saturable absorber (SA) section (VSA) of QD MLL...
We demonstrated the direct modulation in InAs/GaAs quantum dot (QD) lasers on Si. The Fabry-Pérot QD laser was integrated on Si by direct bonding method, and a cavity was formed by the as-cleaved facets without HR/AR coatings. The bonded laser was operated at room temperature with a threshold current of 40 mA and a maximum output power of 30 mW (single facet). A 6 Gbps non-return-to-zero (NRZ) signal...
We demonstrate an ultrashort pulse and high power single-section mode-locked laser using chirped multiple InAs /InP quantum dot (QD) layers as the active region of the laser. The chirped QD active region consists of seven layers of InAs QDs of different heights, which is beneficial in broadening the material gain spectrum. A transform-limited Gaussian pulse with pulse duration of 322 fs is obtained...
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