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2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)]
The incorporation of Ga at the transition stage from InAs vertical growth to InGaAs lateral growth was investigated for the InGaAs microdiscs on a patterned Si (111) substrate by metal-organic vapor-phase epitaxy (MOVPE). X-ray diffraction reciprocal space mapping (XRD-RSM) of (331) plane clarified the extent of InGaAs lattice relaxation and solid Ga content as a function of the partial pressure of...
The electronic states of compound semiconductor (III–V and II–VI) alloys are calculated by the recently proposed interacting quasi-band (IQB) theory. Combining with the sp3(s*) empirical tight-binding model, quasi-Hamiltonian matrix facilitates the calculation of the conduction and valence bands of general alloys, A1-xBxD (AD1-yFy) for arbitrary concentration x (y) under a unified scheme. The concentration...
Bismuth ferrite (BiFeO3) thin films were fabricated by a simple spin-coating method. Polycrystalline BiFeO3 thin films were confirmed by X-ray diffraction. Lattice constants and crystallite sizes of the BiFeO3 thin films increased with increasing concentration of BiFeO3 precursor solution. BiFeO3/CH3NH3PbI3 photovoltaic devices were fabricated to characterize photovoltaic properties. Current density-voltage...
We have investigated strain effects on the electrical conductivity of bulk GaSb and GaSb(111) films. For the biaxially-strained bulk systems, the electrical conductivity becomes highest at normal pressure and temperature for lower hole concentration. As the hole concentration becomes larger, the singularity of the electrical conductivity at normal pressure disappears. Such behaviors originate from...
Strain engineering is a promising method for controlling electron transport in graphene. From our previous experimental result, we found that the observation of gap formation by lattice strain requires large spatial variation of strain and long mean free path of charge carriers. For satisfying above requirements, we developed new method for introducing lattice strain to graphene. In this method, we...
III–V integration on Si is one of the most attractive options to extend future CMOS circuits. However, direct material integration by epitaxial growth is challenging mainly due to the large lattice mismatch. Here we present a novel technique that enables InAs and GaSb nanowires to be grown on Si substrates in the same MOVPE run. By reducing the Au seed size, the nucleation of GaSb can be suppressed...
We have investigated the relationship between the Ag concentration and the pn-junction depth in the Mg2Si pn-junction photodiodes fabricated by thermal diffusion of Ag acceptor. The Ag concentration profiles and pn-junction depth in the samples annealed between 400 and 550 °C for 10min were studied by SIMS and EBIC. We observed two types of lattice diffusions with two different diffusion coefficients...
Dilute nitride GaNP is potentially useful as the top junction in dual-junction solar cells on Si because it has a tunable direct-bandgap and small lattice mismatch with Si. Investigations on GaP are the first step toward this goal. Our best GaNP solar cell on GaP ([N] = 1.8%, Eg = 2.05 eV) achieves an efficiency of 7.9%, which is 3 times higher than the most efficient GaP solar cell to date and higher...
We present results about the growth, structural and strain relaxation properties and room temperature electrical transport of GaAs/InSb core-shell nanowires grown self-catalyzed by molecular beam epitaxy on Si (111) substrates. Due to the high lattice mismatch of about 14%, the growth of the shell proceeds from an island-based nucleation to a closed and rather smooth layer. High resolution transmission...
We investigated the effect of film thickness on structural and magnetic properties of ZnSnAs2:Mn thin films. Samples with 80, 170 and 250 nm values of thickness were epitaxially grown on semi-insulating InP(001) substrates, followed by ZnSnAs2 buffer layers using molecular beam epitaxy (MBE). The lattice constants and crystal structures were determined by X-ray diffraction (XRD). The reciprocal lattice...
Selective doping and band-offset in core-shell nanowire (NW) structures using germanium (Ge)/ silicon (Si) can realize a type of high electron mobility transistor (HEMT) structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement...
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