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The fabrication and the characterization of a family of power Bipolar Mode JFET's (BMFET) is reported. In these devices, blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm2) have been obtained. Results allow to get an insight in the physics of operation of the BMFET, to define their theoretical limits of operation, and to understand the reasons for the superior performance...
A one-dimensional analytic model for the Insulated Gate Bipolar Transistor (IGBT) which includes a high-doped buffer layer in the low-doped bipolar transistor base is developed. The model is used to perform a theoretical trade-off study between IGBTs with and without the buffer layer. The study is performed for devices of equal breakdown voltages, and the critical parameters chosen to “trade-off”...
A novel resonant switch operating under the principle of zero-voltage switching is presented. In contrast to the zero-current switching, this technique eliminates the switching loss and dv/dt noise due to the discharging of MOSFET's junction capacitances and the reverse recovery of diodes, and enables the converters to operate at yet higher frequencies.
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