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This paper reviews some essential aspects of the filamentary bipolar resistive switching concept, and how appropriate material design and technology development makes it possible to translate it into a very attractive memory device, opening pathways for future memory replacements on condition specific key roadblocks are overcome.
Memristive switching, which is nonvolatile resistive switching in metal/oxide/metal sandwich structures, have attracted considerable attention not only for the next-generation nonvolatile memory but also for the artificial neural network computing. Despite the excellent memory performance, the physical origin of memristive switching occurring in the simple two terminal device structure had been missing,...
The reversible resistive switching in ZnO nanowire-based memristive devices is here discussed. Four configurations were studied: top electrode in Pt, with and without polymer coating (polyacrylic acid); top electrode in Cu, with and without the same polymer coating. All the tested devices showed a bipolar resistive switching behavior, with enhanced I-V non-linearity when coated with the polymer. While...
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