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In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer...
With the increased focus on III–V materials as potential candidates for next-generation nanotransistors advanced bandstructure models going beyond the parabolic band approximation are required to ensure accurate device simulations. For that purpose we present in this paper a quantum transport approach that relies on the effective mass approximation extended with a non-parabolic (NP) correction of...
A channel-potential based compact I–V model for Double-Gate Tunneling FETs (DG-TFETs) incorporating channel length scaling is presented. The model covers both sub-threshold and strong-inversion operation regimes and achieves good agreement with TCAD results while the channel length is scaled down to 10nm. The effect and mechanism of channel length scaling on the performance of DG-TFETs are investigated...
Tunnel FETs (TFET) are promising candidates for integration in logic circuits at very low supply voltages. We report here a SPICE compact model that describes all regimes of the TFET transistor. The current contribution from source and drain sides is described by an original set of equations including the electrostatic behavior and the effect of superlinear onset. Finally, this model is implemented...
In this work, a comprehensive investigation of the effect of source/drain tunneling in ultra-scaled transistors is presented. A novel approach to efficiently and accurately incorporate the quantum-mechanical effects of source/drain (S/D) tunneling in semi-classical device simulators has been developed. The ballistic quantum transport model has been implemented as part of the Vienna-Schrödinger-Poisson...
Because of the scaling of electronic devices, quantum effects play an important role on their characteristics which are becoming more and more dominant as transistors approach to nanometer scales. Therefore, the inclusion of these effects in advanced device simulators will be mandatory to predict the behavior of future transistors targeting sub-10nm nodes. This work implements Source-to-Drain Tunneling...
In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the...
We present a numerical drift-diffusion model of electronic-ionic transport combined with a Schottky contact barrier model to study resistive switching phenomena in ReRAM devices. Capturing the transition between Schottky and ohmic contact resistances upon temperature-accelerated ion migration, our model correctly describes the quasi-static I–V switching characteristics as well as dynamic set and reset...
We have theoretically investigated the specific contact resistivity of n-type Si and Ge metal-insulator-semiconductor contacts with various insulating oxides. We have found a significant reduction of the contact resistivity for both Si and Ge with an insertion of insulators at low and moderate donor doping levels. However, at the higher doping levels (>1020 cmu−3), the reduction of the contact...
In this paper, the effectiveness of transistor stacking (or supply-gating) to reduce the leakage in the standby-mode of operation of sub-10nm double-gate MOSFETs is investigated. For that purpose, device parameters such as symmetric/asymmetric gate-to-source/drain underlap and body thickness are optimized to improve the ON-state current to the OFF-state current ratio. The optimized devices are then...
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