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This paper presents the current-voltage (I–V) characteristics of the recently proposed Silicon-on-Ferroelectric Insulator Field Effect Transistor (SOFFET). In this work we have concentrated on Partially Depleted (PD) structure. PD-SOFFET is based on the silicon-on-insulator (SOI) device technology and utilizes a negative capacitance that can be achieved by inserting a layer of ferroelectric insulator...
Voltage-to-time converter (VTC) circuits are used as the core component of single-slope analog to digital converters (ADCs). These VTC circuits have traditionally depended on the use of a constant current source as part of their implementation in order to have good linearity. An alternative approach is presented where only voltage sources and a few discrete components are needed without sacrificing...
In recent years the concept of chaos-based computing has emerged as a way to harness the rich state space of chaotic systems for robust computation. Potential advantages of such chaotic computational elements include improved security in the form of logic obfuscation and power analysis mitigation. For example, the chaotic nature of computation leads to a chaotic power profile that is difficult to...
This paper presents a fully integrated operational amplifier (OPAMP) with positive feedback fabricated in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) technology. The OPAMP is implemented by using a 5 µm nMOS a-IGZO TFT process, and is operated from a dc supply voltage of 6 V. The circuit relies on positive feedback in the input differential pair to improve gain...
Continued miniaturization of semiconductor technology to nanoscale dimensions has elevated reliability challenges of high density Field-Programmable Gate Arrays (FPGA) devices due to increasing impacts of Process Variation (PV). The issue is addressed herein using a systematic bottom-up analysis by determining the relative influence of PV on alternate design realizations of FPGA logic blocks. Results...
One of the important aspects of integrated circuit design is the doping profile of a transistor along its length, width and depth. Devices for super-threshold circuit usually employ halo and retrograde doping profiles in the channel to eliminate many unwanted effects. Devices for subthreshold circuits do not require halo and retrograde doping profiles due to lower operating voltage. This will reduce...
Gate-enclosed MOSFETs are commonly used for extreme environments with constant radiation exposure due to its radiation tolerance. Because of its annular geometry, the standard BSIM3 models do not accurately represent what happens physically on the device. An accurate model extraction can take months to complete, thus the need for a fast extraction method. Of the several model extraction methods, the...
A sub 1V reference circuit is proposed, that exploits the CTAT and PTAT voltages in the beta multiplier circuit to attain a stable voltage with temperature and power supply. A one-time calibration is integrated in the architecture to get a good performance over process. Further, chopper stabilization is proposed in the circuit itself rather than in the OTA to acheive a 4.8x reduction in integrated...
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