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In this work, the static and low frequency noise characterization of standard and rotated UTBOX n — type transistors is reported. The main short channel effects and analog parameters are studied in order to investigate the impact of the channel orientation: <110> versus <100>. In addition to the improvement on the electrical properties for the rotated — channel devices, the 1/f noise level...
This work studies the low frequency noise (LFN) behaviour of vertical nanowire Tunnel-FETs (NW-TFETs) with Si or Ge sources, where the latter devices have different HfO2 thicknesses (2nm and 3nm) in the gate stack. The presence of Ge in the source yields an increase in the current noise power spectral density (Sid) at low frequency, while Sid is reduced for the thinner HfO2, due to the reduction of...
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