In this work, the static and low frequency noise characterization of standard and rotated UTBOX n — type transistors is reported. The main short channel effects and analog parameters are studied in order to investigate the impact of the channel orientation: <110> versus <100>. In addition to the improvement on the electrical properties for the rotated — channel devices, the 1/f noise level is found to be quite similar for long — channel devices for both rotated and standard channel transistors. Low frequency noise spectroscopy is also used as a diagnostic tool in order to identify traps in the Si film.