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This article presents a power detector proposed for low-cost millimeter-wave applications. Thus, the detector uses MOSFET transistor in sub-threshold region in order to realize the signal rectification benefiting from the natural exponential characteristics of MOS transistor in this regime. The detector was designed using the BiCMOS 55 nm technology from ST-Microelectronics. Thanks to this technology,...
This paper presents the design of a mm-Wave PA for a transmitter of an E-Band mobile backhaul network, implemented using a 55nm SiGe BiCMOS technology. It has a 4-stage balanced CE configuration and the outputs are converted to single-ended using an integrated balun, which provides insertion losses smaller than 1dB at E-Band frequencies. The PA presents a maximum S21 of 15.5 dB at 74GHz and its 3-dB...
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