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The non-local band to band tunneling model developed and implemented into the three-dimensional device simulator by the authors is evaluated for the tunnel-FET modeling focused on device geometry effects. Measured characteristics of SOI, Fin, and parallel-plate silicon tunnel FETs fabricated by the authors are compared with simulations based on the non-local model. Although each device structures...
We propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region generated by a triangular gate. In this region, total internal reflection may occur, which leads to the controllable suppression of transistor transmission. We study the transmission and the current in this device by means of non-equilibrium Green's function (NEGF) simulation.
Multi-scale modelling of the electron transport via a metal-semiconductor interface is carried out by coupling ab initio calculations (DFT) with three-dimensional finite element ensemble Monte Carlo simulations. The results for the Mo/GaAs (001) interface show that variations of the electronic properties with the distance from the interface have a strong impact on the transport characteristics. In...
This paper presents a two dimensional numerical simulation on the program and retention operation of charge trapping memory. The developed simulator self-consistently solves two-dimensional Poisson equation, carrier continuity equation and trapped charge conservation equation. Driftdiffusion transport scheme is used for modeling the charge transport in the trapping layer. Major physical models, such...
This work focuses on studying band-to-band tunneling in 3D devices, while considering variations in material properties (mass, doping), applied bias, or geometry. A simulation study of cylindrical nanowires, tapered structures and doping concentration variation demonstrates the importance of 3D effects in band-to-band tunneling current computation.
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