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We present a robust wafer-scale top-down process for the fabrication of locally thinned-downed silicon nanowire (SiNW) devices. The fabrication is based on electron-beam lithography in combination with a two-step tetramethylammonium hydroxide (TMAH) wet etch. We optimized the etching profile of the TMAH process on silicon-on-insulator <100> using isopropanol additive and temperature regulation,...
We report here the design and fabrication of freestanding Hafnium dioxide (HfO2) resonant gratings. The proposed freestanding HfO2 gratings are implemented on the prepared HfO2/Silicon wafer by combining ion beam etching (IBE) of HfO2 film with deep reactive ion etching (DRIE) of silicon substrate. The grating patterns are defined by electron beam lithography and then transferred to HfO2 film by IBE...
In this study, suspended graphene clamp-clamp beam (SGCCB) as long as 100 µm was manufactured by FIB cutting. Large-scale graphene film was grown on Cu foil by CVD and transferred to DRIE defined silicon substrate. The influence of FIB cutting time and ion beam intensity on the pattern profile were investigated with an optimized processing recipe. The SGCCBs revealed a sharp edge, which can be used...
We fabricate Silicon nanowire (SiNW) arrays for solar-cell applications on 6-inch wafers employing metal-assisted chemical etching (MacEtch). It can reduce cost and energy consumption. However it is difficult to make uniform SiNW arrays on large size wafer. Here we demonstrate a simple method to achieve a uniform SiNW on 6 inch wafers. Moreover, optical properties and surface morphologies of 6 inch...
This paper reports the fabrication, measurement and discussion about the nanosolenoid inductors for high frequency applications as much as 40 GHz, taking advantage of a much smaller size compared with traditional microinductors. Three small size nanosolenoid inductors are fabricated, such as a nanosolenoid inductor with a diameter of 4.8 um, pitch of 10 um, length of 22 um. The nanohelix inductors...
III–V compound semiconductor quantum dots photonic devices are very attractive because of their low power consumption, temperature stability, and high-speed modulation. We studied and developed a defect-free top-down fabrication process for sub-20-nm GaAs nanodisks (NDs) that uses bio-template and neutral beam etching. We successfully fabricated 100-nm-high nanopillars embedding 4- and 8-nm-thick...
This paper reports a novel maskless nanoscale material etching method based on microplasma reactor array with advantages of high etching efficiency, high fidelity, simple-structure, and flexible to etching various material. A 2×2 inverted pyramidal microplasma reactor array with each cavity dimension of 50µm was successfully fabricated by MEMS process. Experiment results showed that the devices could...
Graphene etching using oxygen neutral beam for high-quality graphene nanoribbon fabrication was investigated. A convenient index of D-band to G-band Raman intensity ratio showed that fewer defects on the edge of the graphene after neutral beam etching were observed than after plasma etching. The results demonstrate that damage-less graphene etching is possible by neutral beam etching due to suppression...
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